71V3556SA133BQ

Overview

The Renesas Electronics Corporation 71V3556SA133BQ is a static random access memory device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and requires a power supply voltage ranging from 3.135 V to 3.465 V. Maximum power consumption is specified at 310 mA. The device supports a minimum operating temperature of -40°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations
• Synchronous Single Data Rate architecture with internally synchronized output buffer enable
• Positive clock-edge triggered address, data, and control signal registers for pipelined applications
• Supports four-word burst capability in either interleaved or linear modes

Applications

• High-speed data buffering in telecommunications systems
• Cache memory implementation in embedded processing units
• Data storage in industrial automation controllers
• Memory expansion in network infrastructure equipment

Procurement Notes

Verify the exact suffix designation for this part number, as official documentation lists variants such as SA133BQI and SA133BGI. Confirm RoHS compliance status, as specific suffixes may differ in regulatory adherence. Check for active discontinuation notices, as several related models have been marked as obsolete by the manufacturer. Ensure compatibility with existing PCB footprints before procurement.

Selection Notes

Select this component when zero bus turnaround latency is critical for system throughput. The synchronous nature allows for predictable timing in high-frequency designs. Consider the 36-bit word width for applications requiring wide data paths without external multiplexing. Evaluate thermal requirements given the maximum current consumption specifications under full load conditions.

Part Context

This SRAM belongs to the 71V3556 family of synchronous ZBT devices. The family includes variants with different speeds and package options, such as the 100 MHz and 150 MHz versions. These components are designed to replace asynchronous SRAMs in high-performance systems while maintaining pin compatibility with certain legacy interfaces. The technology focuses on reducing bus turnaround delays inherent in traditional synchronous memories.

Replacement Considerations

Official substitutes include the IDT71V3556SA133BQI and other speed grades within the same 71V3556 series. Verify package dimensions and pinout compatibility when replacing with BGA or CABGA variants. Cross-reference electrical parameters to ensure the replacement meets the 133 MHz clock requirement.