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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V3556SA133BQGI8 is a static random-access memory device organized as 128K x 36, providing a total storage capacity of 4 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and requires a power supply voltage ranging from 3.135 V to 3.465 V. Maximum power consumption is specified at 310 mA. The device supports an operating temperature range from -40°C to +85°C and is housed in a surface-mount CABGA-165 package.
Feature Summary
- Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations
- Synchronous Single Data Rate architecture with internally synchronized output buffers
- Positive clock-edge triggered address and control signal registers for pipelined applications
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network processing systems
- Data storage in industrial control systems requiring wide data buses
Procurement Notes
Verify current availability status as the manufacturer has indicated end-of-life or limited supply conditions for this specific part number. Confirm that the CABGA-165 package matches your PCB footprint requirements. Ensure compliance with RoHS directives if applicable to your region. Check for any recent product change notices regarding substrate or labeling updates before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide data bus is required for synchronous memory applications. The 133 MHz speed grade offers faster performance than the 100 MHz variants while maintaining ZBT efficiency. Consider the 165-pin BGA package constraints during layout design. Verify that the system can support the 3.3V I/O levels and the specific power delivery requirements outlined in the datasheet.
Part Context
This part belongs to the 71V3556SA series of Synchronous Zero Bus Turnaround SRAMs. It shares architectural similarities with other members like the 71V3556SA100 and 71V3556SA166, differing primarily in clock speed and package type. The series is designed for high-performance embedded systems needing fast, wide-memory interfaces without turnaround latency penalties.
Replacement Considerations
Direct substitutes include the 71V3556SA100BQGI8 for lower speed requirements and the 71V3556SA166BQGI8 for higher speed needs, provided pin compatibility is verified. Cross-reference with IDT-branded equivalents such as IDT71V3556SA133BQGI8 if sourcing from legacy inventories.
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