71V3557S75BGG

Memory IC Overview

The Renesas Electronics Corporation 71V3557S75BGG is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM). It features a total storage capacity of 4.5 Megabits, organized as 128K words by 36 bits. The device operates with a maximum access time of 7.5 nanoseconds and supports a clock frequency up to 117 MHz. It requires a core supply voltage between 3.135V and 3.465V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14mm by 22mm. It functions within an ambient temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via synchronous SDR ZBT architecture
• Provides burst mode operation for efficient sequential data access
• Includes global write control and byte write enable signals for precise data management

Memory IC Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers

Memory IC Procurement Notes

Verify the specific suffix BGG confirms the 119-PBGA package dimensions and pinout before ordering. Confirm RoHS3 compliance status if required by environmental regulations. Check current lifecycle status as discontinuance notices may affect long-term availability. Ensure voltage levels match system requirements strictly within the specified operating range.

Memory IC Selection Notes

Select this component when a 36-bit wide interface is necessary for system bus compatibility. Consider the 119-pin PBGA footprint for PCB layout constraints. Evaluate thermal performance within the commercial temperature range. Compare against other members of the 71V3557 family for alternative package options if space permits.

Memory IC Part Context

This part belongs to the Renesas 71V3557 series of synchronous SRAM devices. The series offers various speed grades and package configurations to suit different design needs. The 71V3557S75 variant specifically targets applications demanding sub-10ns access times. It utilizes standard 3.3V logic levels for I/O compatibility.

Memory IC Replacement Considerations

Check for direct cross-reference part numbers from Renesas or IDT. Verify that any substitute maintains the 128K x 36 organization and 119-pin PBGA form factor. Ensure timing parameters meet or exceed the original 7.5 ns specification.