71V3557S75BGG8

Overview

The IDT71V3557S75BGG8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128 kilowords by 36 bits. The device features a parallel interface with a maximum access time of 7.5 nanoseconds and operates within a supply voltage range of 3.135 volts to 3.465 volts. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14 by 22 millimeters. The component supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

• Supports high-speed parallel data transfer via a synchronous single data rate architecture
• Provides wide 36-bit data word width for efficient bus interfacing
• Utilizes zero wait state burst technology for reduced latency
• Operates on standard 3.3-volt logic levels

Applications

• High-performance networking equipment requiring fast packet buffering
• Telecommunications infrastructure systems
• Industrial control systems with strict timing requirements
• Embedded computing platforms utilizing wide data buses

Procurement Notes

Verify the specific suffix BGG8 to confirm the 119-pin PBGA package configuration, as other suffixes indicate different physical footprints. Confirm RoHS3 compliance status through official documentation. Check for product change notices regarding label changes or substrate updates. Ensure availability aligns with current manufacturing lifecycle status, as this component may be subject to discontinuation notices.

Selection Notes

Select this component when a 36-bit wide data path is required for system architecture compatibility. The 7.5-nanosecond access speed suits applications needing rapid data retrieval without complex asynchronous timing adjustments. Consider the 119-ball grid array package for high-density board layouts where surface mount technology is mandatory. Evaluate thermal dissipation capabilities within the specified operating temperature range during design integration.

Part Context

This part belongs to the IDT 71V3557 family of synchronous SRAM devices. The family offers various access speeds and package options to accommodate different system performance needs. The 75 variant specifically denotes the 7.5-nanosecond speed grade. These devices are designed for embedded applications requiring reliable, high-speed volatile memory storage with low power consumption characteristics relative to their performance class.

Replacement Considerations

• IDT71V3557S75BGG

FAQ

What is the memory organization of the IDT71V3557S75BGG8?

The memory is organized as 128K words by 36 bits.

Does this component support synchronous operation?

Yes, it utilizes a synchronous single data rate (SDR) interface controlled by a clock signal.