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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:7.5 ns
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Overview
The IDT71V3557S75BGI is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 4.5 megabits, organized as 128 kilowords by 36 bits. The device features a parallel interface with a maximum access time of 7.5 nanoseconds and operates at a clock frequency up to 117 MHz. It requires a supply voltage between 3.135 V and 3.465 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14 mm by 22 mm.
Feature Summary
- Supports high-speed parallel data transfer via a synchronous SDR architecture
- Provides wide 36-bit data word organization for efficient bus interfacing
- Operates within standard 3.3 V I/O voltage specifications
Applications
- High-performance embedded systems requiring fast local memory
- Network infrastructure equipment and telecommunications hardware
- Industrial control systems and automation controllers
Procurement Notes
Verify the specific suffix BGI against official Renesas documentation to confirm the 119-PBGA package configuration and lead-free status. Confirm current production status as this part number may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints and reflow soldering profiles specified in the datasheet before procurement.
Selection Notes
Select this component when a 36-bit data width is required for system bus alignment. The 7.5 ns access time suits applications needing moderate-to-high speed synchronous memory. Compare against other series members like the 71V3577 or 71V3556 variants if different timing speeds or package options are needed for the design.
Part Context
This device belongs to the Renesas 71V35xx family of synchronous SRAMs. These components are designed to replace asynchronous memories in high-speed digital designs. The family offers various speed grades and package options to support diverse embedded memory requirements across industrial and commercial sectors.
Replacement Considerations
Check for direct pin-compatible alternatives such as the 71V3557S75BQI or 71V3557S80BGI. Verify that substitute parts maintain the same 119-PBGA footprint and electrical characteristics to ensure seamless integration without redesign.
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