71V3557S75BGI8

71V3557S75BGI8

  • Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:2786f6e7bbf8 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns

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71V3557S75BGI8

Overview

The Renesas Electronics Corporation 71V3557S75BGI8 is a synchronous single data rate (SDR) static random-access memory integrated circuit. It features a storage capacity of 4.5 megabits organized as 128K by 36 bits. The device operates with a parallel interface and provides an access time of 7.5 nanoseconds. It functions within a supply voltage range of 3.135 volts to 3.465 volts and supports a maximum clock frequency of 117 MHz. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

  • Supports synchronous burst mode operations for high-speed data transfer
  • Includes self-timed write cycles with global write control capabilities
  • Features power-down functionality controlled by dedicated input pins

Applications

  • High-performance computing systems requiring fast memory access
  • Network infrastructure equipment utilizing parallel bus architectures
  • Industrial automation controllers needing reliable volatile storage

Procurement Notes

Verify current availability status as this specific part number may be discontinued or subject to production changes. Confirm the exact package marking and suffix requirements against official manufacturer documentation before finalizing orders. Ensure compliance with moisture sensitivity level handling procedures during assembly processes.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for system integration. Consider the 119-pin BGA footprint constraints and thermal management needs for surface mount applications. Evaluate the 7.5 nanosecond access speed against system timing requirements to ensure compatibility with target processor buses.

Part Context

This device belongs to the 71V3557 series of synchronous SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other members of the family but differs in specific pin configurations and package options. The series is designed for applications demanding high bandwidth and low latency memory solutions.

Replacement Considerations

Check for direct substitutes such as the IDT71V3557S75BQ8 which offers similar specifications in a different package format. Verify electrical compatibility and pinout alignment before substituting components in existing designs.

71V3557S75BGI871V3557S75BGI8

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