71V3557S75PFG8

Overview

The IDT71V3557S75PFG8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36 bits, providing a total storage capacity of 4.5 Mbit. The device operates with a 3.3V core supply and supports 3.3V I/O levels. It utilizes a parallel interface with an access time of 7.5 ns. The component is housed in a 100-pin Thin Quad Flat Package (TQFP) with dimensions of 14x14 mm. It is designed for commercial temperature ranges from 0°C to 70°C.

Feature Summary

• Supports high-speed synchronous burst operations with flowthrough output mode for minimal latency.
• Integrates self-timed write cycles controlled by global write control and byte write enable signals.
• Includes optional boundary scan JTAG interface compliant with IEEE 1149.1 standards.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems operating within commercial temperature ranges

Procurement Notes

Verify the specific suffix PFG8 to confirm the 100-pin TQFP package and lead-free status. Confirm the 'S' designation indicates the slow ZBT variant if precise timing characteristics are critical for your design. Check current manufacturing status as this part may be obsolete or subject to last-time buy notices. Ensure moisture sensitivity level handling procedures are followed during assembly.

Selection Notes

Select this component when a 36-bit wide data path is required for system bus compatibility. The 7.5 ns access time suits applications needing moderate-to-high speed synchronous memory without complex clocking schemes. Consider the 100-pin TQFP package for easier prototyping compared to BGA options. Verify that the 3.3V I/O voltage matches the host processor or controller logic levels.

Part Context

This part belongs to the IDT 71V3557 family of synchronous SRAMs. The family offers various access times and package options to accommodate different performance and form factor requirements. The 71V3557 series is characterized by its 3.3V operation and support for burst modes, making it suitable for replacing asynchronous SRAMs in modern high-speed digital designs.

Replacement Considerations

Public confirmed substitute part numbers: None identified in source material.