71V3557S80BGI8

Overview

The Renesas Electronics Corporation 71V3557S80BGI8 is a static random-access memory device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 100 MHz and features an access time of 8 ns. The component utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. Maximum power consumption is rated at 210 mA. It supports an operating temperature range from -40°C to +85°C and is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

• Supports synchronous single data rate (SDR) burst operations for high-speed data transfer
• Includes self-timed write cycles with global write control and byte write enable capabilities
• Features low-power standby mode controlled by the ZZ input pin

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment utilizing synchronous memory interfaces
• Industrial control applications demanding wide bus width and reliable operation

Procurement Notes

Verify current availability status as this component may be subject to end-of-life restrictions or discontinuation notices. Confirm that the specific suffix matches the required package and speed grade for your design. Ensure compliance with RoHS non-compliant status if environmental regulations apply to your deployment. Cross-reference official datasheets for any recent product change notifications affecting substrate or labeling.

Selection Notes

Select this part when a 36-bit data bus width is necessary for system architecture compatibility. The 8 ns access time suits designs requiring moderate-to-high throughput without the complexity of pipelined architectures. Verify that the 119-pin BGA footprint fits within the mechanical constraints of the target PCB layout. Consider the 3.3V I/O levels to ensure proper interfacing with host controllers.

Part Context

This component belongs to the 71V3557 family of synchronous SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other members like the 71V3577 series but differs in specific timing parameters and feature sets. The device represents a specialized memory solution designed for applications needing wide data paths and synchronous operation modes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.