71V3557S80PFGI

Memory IC Overview

The Renesas Electronics Corporation 71V3557S80PFGI is a 4.5 Mbit (128K x 36) synchronous static random-access memory (SRAM) IC utilizing Single Data Rate Zero Bus Transition (ZBT) technology. It features an 8 ns access time and operates at a maximum clock frequency of 100 MHz. The device supports a parallel interface with 3.3 V I/O levels, functioning within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x14 mm, designed for surface-mount installation.

Memory IC Feature Summary

• Employs Synchronous Single Data Rate Zero Bus Transition (ZBT) architecture to enhance data throughput efficiency while reducing power consumption during bus transitions.
• Integrates burst mode capabilities that allow sequential data retrieval for a single address presentation, optimizing system performance for high-speed applications.

Memory IC Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment demanding low-latency memory access
• Industrial control units utilizing synchronous logic interfaces

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to End-of-Life status. Confirm RoHS compliance requirements as the specific package variant may not meet current environmental standards. Validate pin compatibility and thermal specifications against target PCB designs before integration into production workflows.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required with synchronous timing constraints. Ensure the design accommodates the 100-pin TQFP footprint and 3.3 V logic levels. Consider alternative packages if higher density or different form factors are needed for space-constrained layouts.

Memory IC Part Context

This part belongs to the IDT 71V3557 family of synchronous SRAMs, manufactured by Renesas Electronics following its acquisition of Integrated Device Technology. The series is characterized by ZBT technology for improved power efficiency compared to traditional asynchronous memories, targeting high-bandwidth data processing tasks.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers include ISSI IS61NLF12836A-7.5TQLI. Verify electrical parameters and pinout compatibility before substitution.