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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The Renesas Electronics Corporation 71V3557S85BG is a static random-access memory (SRAM) device organized as 128K x 36 bits, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 87 MHz and features an access time of 8.5 ns. The component utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 119-PBGA package measuring 14x22 mm and supports surface mount installation.
Feature Summary
- Synchronous Single Data Rate (SDR) architecture for high-speed data transfer
- Zero Bus Turnaround (ZBT) technology to minimize wait states
- Flow-through operation mode for continuous data processing
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment control units
- Network infrastructure hardware
Procurement Notes
Verify the specific suffix requirements for this part number, as variations such as BGI8 or BG8 may indicate differences in packaging or environmental compliance. Confirm RoHS status and moisture sensitivity levels before integration. Check for End-of-Life notices, as production status can affect long-term availability and sourcing strategies.
Selection Notes
Select this component when a 36-bit wide data path is required for system bus compatibility. Ensure the design accommodates the 119-ball PBGA footprint and thermal characteristics. Compare against other members of the 71V3557 family if different access times or package types are needed for the specific application constraints.
Part Context
This SRAM belongs to the IDT/Renesas 71V3557 series of synchronous ZBT memories. These devices are designed to replace asynchronous SRAMs in high-speed applications while offering lower power consumption and easier interface timing. The series includes various speed grades and package options to suit diverse electronic design requirements.
Replacement Considerations
Check for direct substitutes within the 71V3557 family, such as the 71V3557S80 or 71V3557S85 variants, which share similar architectures but may differ in speed or package. Verify pin-to-pin compatibility and electrical specifications before replacing.
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