71V3557S85BG8

Memory IC Overview

The Renesas Electronics Corporation 71V3557S85BG8 is a 4.5 Mbit (128K x 36) synchronous static random-access memory (SRAM). It operates with a maximum clock frequency of 87 MHz and features an access time of 8.5 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports surface mount installation and functions within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports synchronous single data rate (SDR) burst mode operations for high-speed data transfer.
• Integrates self-timed write cycles controlled by global write control, byte write enable, and byte writes.
• Features power-down functionality managed by the ZZ input pin to reduce standby current consumption.

Memory IC Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment utilizing flow-through or burst architectures
• Industrial control units needing reliable volatile memory storage

Memory IC Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm that the specific suffix matches the required package type and temperature grade. Check for RoHS compliance status and ensure compatibility with existing PCB footprints. Validate lead-free specifications against environmental regulations applicable to your region before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required for synchronous applications. Ensure the design accommodates the 119-pin BGA footprint and 3.3V I/O levels. Consider thermal management capabilities given the operating temperature range. Verify that the system bus architecture supports the specified access times and clock frequencies for optimal performance integration.

Memory IC Part Context

This SRAM belongs to the 71V3557 family of synchronous memories designed for high-density data processing tasks. It shares architectural similarities with other devices in the series but offers specific timing characteristics suited for pipeline or flow-through implementations. The device represents a solution for applications demanding rapid read/write cycles within compact surface-mount packages.

Memory IC Replacement Considerations

Consult official datasheets for cross-reference candidates such as the IDT71V3557S85BGI8. Verify pinout compatibility and electrical parameter alignment before substitution. Review manufacturer change notices for any packaging or substrate modifications that may affect mechanical fit.