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71V3558SA100BQG
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Product Detailed Parameters
- Description：IC SRAM 4.5MBIT PAR 165CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR (ZBT)
- Memory Size：4.5Mbit
- Memory Organization：256K x 18
- Memory Interface：Parallel
- Clock Frequency：100 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-TBGA
- Supplier Device Package：165-CABGA (13x15)
- Access Time：5 ns
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Overview
The 71V3558SA100BQG is a 4.5 Mbit Synchronous ZBT SRAM manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 256K x 18 bits. The device supports a maximum clock frequency of 100 MHz and offers a typical access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 165-CABGA package measuring 13x15 mm, designed for surface mount installation.
Feature Summary
- Synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) technology for high-speed data transfer
- Pipelined burst counter architecture supporting sequential read operations
- Compatible 3.3 V I/O levels for system integration
Applications
- High-performance embedded systems requiring fast random access
- Industrial equipment control units
- Telecommunications infrastructure hardware
Procurement Notes
Verify the specific suffix BQG against official Renesas documentation to confirm the exact package type and temperature rating. Confirm RoHS compliance status as it varies by manufacturing date and region. Check for active obsolescence notices or Product Change Notifications (PCNs) prior to procurement decisions.
Selection Notes
Select this component when a 256K x 18 bit configuration is required rather than alternative densities like 128K x 36. Ensure the design accommodates the 165-pin CABGA footprint and thermal requirements. Validate that the 100 MHz synchronous speed meets the system bus timing constraints compared to asynchronous alternatives.
Part Context
This part belongs to the IDT 71V3558 family of synchronous SRAMs, originally developed by Integrated Device Technology before its acquisition by Renesas. The series provides high-density memory solutions for applications demanding low latency and high bandwidth through synchronous parallel interfaces.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Potential equivalents may include other 4.5 Mbit synchronous ZBT SRAMs from Renesas or compatible vendors, provided pinouts and electrical characteristics match exactly.
