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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:3.5 ns
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Overview
The IDT71V3558SA166BQG8 is a 4.5 Mbit synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a memory organization of 256K words by 18 bits and operates with a maximum clock frequency of 166 MHz, achieving a typical access time of 3.5 ns. The device utilizes a parallel interface and requires a supply voltage range of 3.135 V to 3.465 V. It is housed in a 165-ball CABGA package and supports an operating temperature range from 0°C to 70°C.
Feature Summary
- Eliminates dead bus cycles during read-to-write or write-to-read transitions using Zero Bus Turnaround (ZBT) technology
- Supports high-speed data transfer through synchronous operation at frequencies up to 166 MHz
- Provides reliable volatile data storage with low power consumption characteristics typical of CMOS SRAM
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment needing rapid packet processing
- Industrial control systems demanding deterministic memory access
Procurement Notes
Verify component authenticity and datasheet alignment due to obsolete status. Confirm package integrity and moisture sensitivity level handling procedures before assembly. Check for available replacement alternatives as this specific part number may no longer be in active production.
Selection Notes
Select this component when ZBT technology is required to maximize bus efficiency in synchronous designs. Ensure the design accommodates the 3.3V I/O levels and the specific 165-ball CABGA footprint. Verify thermal management capabilities within the specified commercial temperature range.
Part Context
This device belongs to the 71V3558 family of synchronous SRAMs, designed for applications requiring high bandwidth and low latency. It represents a solution for replacing asynchronous memories in systems where timing constraints are critical and bus turnaround delays must be minimized.
Replacement Considerations
Consult official documentation for qualified substitute part numbers within the same product family or compatible generations.
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