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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:7.5 ns
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Overview
The 71V3559S75BG is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 256K words by 18 bits. The device features a parallel interface with a maximum access time of 7.5 ns and operates within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 119-pin plastic ball grid array package measuring 14x22 mm. The component supports surface mount installation and functions reliably across an ambient temperature range of 0°C to 70°C.
Feature Summary
- Supports synchronous single data rate operation with zero bus turnaround capability for efficient data transfer.
- Includes write control mechanisms such as global write control and byte write enable signals.
- Features power-down functionality controlled by the ZZ input pin to reduce standby current.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in embedded processing systems
- Data storage in industrial automation controllers
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part does not meet current standards. Check for moisture sensitivity level handling procedures during assembly. Validate package dimensions against PCB footprint specifications. Ensure replacement strategies are defined given the discontinuation notice.
Selection Notes
Select this component when a 4.5 Mbit synchronous SRAM with 7.5 ns access speed is required. Ensure the design accommodates the 119-PBGA package constraints. Verify that the system operates within the specified 3.3 V nominal voltage range. Confirm thermal management capabilities for the 0°C to 70°C operating environment. Consider alternative packages if higher density or different interface speeds are needed.
Part Context
This part belongs to the 71V3559 family of synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V3559SA75BQ but differs in package type. The family is designed for high-performance applications requiring fast random access. The specific suffix indicates the 7.5 ns speed grade and PBGA packaging variant.
Replacement Considerations
Public confirmed substitute part numbers include IDT71V3559SA75BQ and 71V3559S75BG8. Verify pin compatibility and electrical parameters before substitution. Note that the SA variant uses a different package. The BG8 variant offers tape and reel packaging instead of trays.
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