71V3559S75BG8

71V3559S75BG8

  • Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:e9b67aea4dd9 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:256K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:7.5 ns

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71V3559S75BG8

Overview

The 71V3559S75BG8 is a 4.5 Mbit synchronous single data rate (SDR) static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 256K x 18 bits. The device supports an access time of 7.5 ns and operates within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component is designed for commercial temperature applications ranging from 0°C to 70°C.

Feature Summary

  • Supports synchronous single data rate (SDR) operation with zero wait state burst access capabilities.
  • Integrates a global write control mechanism alongside byte write enable functions for precise data management.
  • Includes power-down functionality controlled by the ZZ input pin to reduce standby current consumption.

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in industrial control systems
  • Data storage in network infrastructure hardware

Procurement Notes

Verify component authenticity through authorized channels as this part is officially end-of-life. Confirm that the 119-PBGA footprint matches the target design, noting the specific 14x22 mm dimensions. Ensure the system power supply strictly adheres to the 3.135 V to 3.465 V range to maintain signal integrity and operational reliability.

Selection Notes

Select this component when a 4.5 Mbit capacity with a 18-bit word width is required for synchronous parallel interfaces. It is suitable for designs needing 7.5 ns access speeds within a compact BGA form factor. Consider the commercial temperature range limits and the specific voltage requirements during the initial schematic capture phase.

Part Context

This SRAM belongs to the 71V3559 family of high-performance synchronous memories. The 'S' suffix indicates SDR technology, while '75' denotes the 7.5 ns speed grade. The 'BG8' identifier specifies the 119-ball PBGA package configuration. This series is engineered for applications demanding fast read/write cycles and low latency in embedded environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked End-of-Life, consult manufacturer resources for direct replacements or evaluate alternative packages within the same family if specifications align.

71V3559S75BG871V3559S75BG8

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