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71V3559S75BQ
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Product Detailed Parameters
- Description：IC SRAM 4.5MBIT PAR 165CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR (ZBT)
- Memory Size：4.5Mbit
- Memory Organization：256K x 18
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-TBGA
- Supplier Device Package：165-CABGA (13x15)
- Access Time：7.5 ns
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Overview
The IDT71V3559S75BQ is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 256K words by 18 bits. The device features a parallel interface with a maximum access time of 7.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and supports surface mount installation in a 165-CABGA package measuring 13x15 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.
Feature Summary
- Synchronous SDR architecture enabling high-speed data transfer via clocked operations
- Zero bus turnaround (ZBT) technology allowing continuous bidirectional data flow without wait states
- Parallel memory interface supporting standard control signals for system integration
Applications
- High-performance embedded systems requiring fast local memory buffering
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control units needing reliable volatile data storage
Procurement Notes
Verify the exact suffix configuration against official Renesas documentation to ensure compatibility with specific voltage or temperature grades. Confirm current production status as this series may be subject to discontinuation notices. Cross-reference the 165-CABGA footprint dimensions during PCB layout finalization to prevent assembly errors.
Selection Notes
Select this component when a 4.5 Mbit capacity with 18-bit word width is required for synchronous applications. Ensure the design environment supports the specified 3.3 V nominal supply voltage and commercial temperature range. Verify that the host controller can drive the parallel interface timing requirements associated with the 7.5 ns access speed.
Part Context
This part belongs to the IDT 71V3559 family of synchronous SRAMs designed for high-throughput data processing. The manufacturer transitioned from Integrated Device Technology to Renesas Electronics, maintaining the established pinout and functional specifications for legacy system upgrades.
Replacement Considerations
Consult official Renesas obsolescence notices for qualified substitute part numbers. Verify electrical and mechanical compatibility before replacing discontinued inventory.
