ChipApex | Global Electronic Components Supplier
71V3559S75BQI8
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC SRAM 4.5MBIT PAR 165CABGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR (ZBT)
- Memory Size：4.5Mbit
- Memory Organization：256K x 18
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：165-TBGA
- Supplier Device Package：165-CABGA (13x15)
- Access Time：7.5 ns
Download product information
Overview
The IDT71V3559S75BQI8 is a synchronous single-data-rate zero-burst wait-state SRAM manufactured by Renesas Electronics. It provides a total storage capacity of 4.5 Megabits, organized as 256K words by 18 bits. The device features a parallel interface with a maximum access time of 7.5 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and supports surface-mount installation in a 165-CABGA package measuring 13x15 millimeters.
Feature Summary
- Supports synchronous single-data-rate operation with zero-burst wait states for efficient data transfer.
- Utilizes a parallel memory interface architecture for direct system connectivity.
- Designed for surface-mount technology applications requiring compact footprint solutions.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in industrial control systems
- Data storage in network infrastructure hardware
Procurement Notes
Verify the specific suffix I8 against official Renesas documentation to confirm package type and environmental compliance status. Confirm current production status as sources indicate potential end-of-life notifications. Ensure compatibility with existing board layouts regarding the 165-CABGA pinout and thermal requirements before finalizing procurement decisions.
Selection Notes
Select this component when a 4.5Mb synchronous SRAM with 7.5ns access speed is required. The 256K x 18 organization suits applications needing wide data paths. Verify that the 3.3V nominal supply voltage aligns with the system power rails. Consider the 165-CABGA package constraints for PCB space and soldering capabilities during the design phase.
Part Context
This part belongs to the IDT 71V3559 series of synchronous SRAMs. It shares architectural similarities with other members like the IDT71V3557SA75BQ but differs in memory organization and package options. The series is designed for high-performance embedded applications requiring fast random access memory solutions from Renesas Electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Renesas engineering change notices or datasheet cross-reference guides for verified alternatives.
