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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8 ns
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Overview
The 71V3559S80BG8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It offers a storage capacity of 4.5 Mbit organized as 256K x 18. The device features an 8 ns access time and operates within a supply voltage range of 3.135 V to 3.465 V. It utilizes a parallel interface and is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports surface mount installation and functions within an operating temperature range of 0°C to 70°C.
Feature Summary
- Supports synchronous single data rate operation with zero bus turnaround capability for efficient data transfer.
- Features self-timed write cycles controlled by global write control, byte write enable, and individual byte writes.
- Includes low battery input functionality to select between interleaved or linear burst modes.
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify the current lifecycle status before procurement, as this specific part number has been reported as obsolete or end-of-life by major distributors. Confirm RoHS compliance requirements, as the component may not meet current environmental standards. Ensure the 119-PBGA package dimensions match the target PCB footprint. Validate that the 3.3V I/O levels are compatible with the system logic voltages.
Selection Notes
Select this component when a 4.5 Mbit synchronous SRAM with 8 ns access speed is required in a compact BGA form factor. Consider the 256K x 18 organization for applications needing wide data paths. Evaluate the 0°C to 70°C commercial temperature range against environmental conditions. Compare against other members of the 71V3559 family if different access times or packages are needed.
Part Context
This part belongs to the 71V3559 series of high-speed synchronous SRAMs from Renesas. The series typically includes variants with different access times and packaging options, such as the 71V3559S85BG8 which offers an 8.5 ns access time. These devices are designed for applications demanding high bandwidth and low latency memory solutions.
Replacement Considerations
Check for direct pin-compatible substitutes within the 71V3559 family, such as the 71V3559S85BG8, noting differences in access time. Verify if newer generations from Renesas offer equivalent performance in updated packages. Ensure any replacement maintains the 119-pin PBGA footprint and 3.3V operation.
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