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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The 71V3559S80BQ is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 256K words by 18 bits. The device features a parallel interface with an access time of 8 nanoseconds and operates within a supply voltage range of 3.135 to 3.465 volts. It is housed in a 165-pin CABGA package measuring 13x15 millimeters and supports surface-mount installation.
Feature Summary
- Supports synchronous single data rate operations for high-speed data transfer
- Provides true dual-port memory architecture allowing independent port access
- Includes on-chip port arbitration logic for efficient resource management
Applications
- High-performance computing systems requiring fast memory access
- Industrial equipment control units
- Telecommunications infrastructure networking devices
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and moisture sensitivity handling procedures before assembly. Check for RoHS compliance variations across production batches. Ensure compatibility with existing board layouts regarding the 165-CABGA footprint. Validate electrical specifications against current design requirements.
Selection Notes
Evaluate system timing constraints against the 8 ns access speed. Consider power consumption levels relative to available cooling solutions. Assess physical space limitations for the 165-pin BGA configuration. Compare performance metrics with alternative synchronous SRAM options if higher density or different organization is required. Verify temperature range suitability for the intended operating environment.
Part Context
This component belongs to the 71V3559 family of synchronous SRAMs designed for demanding applications. It shares architectural similarities with other members like the 71V3559S85BQ but differs in specific timing characteristics and package options. The series emphasizes reliability and speed for embedded memory needs in complex electronic systems.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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