71V3559S80BQG

Overview

The Renesas Electronics Corporation 71V3559S80BQG is a 4.5 Mbit synchronous static random-access memory (SRAM) organized as 256K x 18. It utilizes Zero Bus Turnaround (ZBT) technology to minimize bus turnaround cycles, supporting parallel interfaces with an access time of 8 ns and a maximum clock frequency of 125 MHz. The device operates on a single 3.3 V power supply with 3.3 V I/O levels. It is housed in a 165-pin Cavity Ball Grid Array (CABGA) package measuring 13x15 mm. The component supports industrial temperature ranges from -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Self-timed write cycle controlled by Global Write (GW), Byte Write Enable (BWE), and Byte Write (BWx) signals.
• Supports interleaved or linear burst modes selectable via the LBO input pin.
• Power-down mode controlled by the ZZ input pin for reduced standby power consumption.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment such as routers and switches
• Industrial automation controllers
• Telecommunications base stations

Procurement Notes

Verify the specific suffix BQG against official Renesas documentation to confirm the 165-CABGA package configuration. Confirm RoHS compliance status as some variants may differ. Check for Product Change Notifications (PCN) regarding label changes or substrate updates. Ensure the source document matches the exact part number IDT71V3559S80BQG or 71V3559S80BQG to avoid pinout mismatches.

Selection Notes

Select this component when system design requires high-speed synchronous memory with minimal bus turnaround latency. The ZBT feature is critical for applications where processor efficiency depends on rapid interface switching. Verify that the 165-pin CABGA footprint fits the PCB layout constraints. Ensure the 3.3 V core and I/O voltage requirements align with the system's power distribution network.

Part Context

This SRAM belongs to the 71V3559 family of high-density synchronous memories. It shares architectural similarities with other ZBT devices like the 71V3558 but offers higher density. The device is designed to replace asynchronous SRAMs in high-speed digital signal processing and networking applications where timing margins are tight.

Replacement Considerations

Direct replacements include the 71V3559SA80BQG for extended temperature range compatibility. Cross-reference pinouts carefully when substituting with older IDT-branded versions. Verify that any alternative maintains the same 165-pin cavity BGA form factor and electrical specifications.