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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The IDT71V3559S80BQG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface and utilizes Zero Bus Turnaround (ZBT) technology for high-speed data transfer with an access time of 8 ns. The device offers a total storage capacity of 4.5 Mbit, organized as 256K words by 18 bits. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 165-CABGA package measuring 13x15 mm.
Feature Summary
- Supports synchronous single data rate (SDR) operation with zero bus turnaround capability for efficient data throughput.
- Provides volatile memory storage with a wide organizational structure suitable for complex data buffering.
- Designed for surface mount installation in compact electronic assemblies.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network infrastructure devices
- Data storage in industrial control systems requiring fast access times
Procurement Notes
Verify component authenticity through authorized distributors due to potential availability from secondary markets. Confirm the specific suffix BQG8 matches the required 165-CABGA package dimensions. Check for RoHS compliance status as older revisions may not meet current environmental regulations. Ensure supply chain stability given the component's long-term availability history.
Selection Notes
Select this component when synchronous SRAM performance with ZBT technology is required for parallel data interfaces. Consider the 165-CABGA package constraints for PCB layout and thermal management. Evaluate the 8 ns access speed against system timing requirements. Compare power consumption characteristics at the specified 3.3 V operating voltage against alternative memory solutions.
Part Context
This part belongs to the IDT71V3559 family of synchronous SRAMs. The 'S' suffix typically denotes specific package or temperature variations compared to other variants like the SA series. The family is designed for applications demanding high bandwidth and low latency in parallel memory architectures.
Replacement Considerations
Consult official Renesas documentation for direct pin-compatible substitutes within the 71V3559 series. Verify electrical compatibility including voltage levels and access times before substitution.
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