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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:256K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
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Overview
The 71V3559S85BG is a 4.5Mb synchronous single data rate (SDR) static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface and an access time of 8.5 ns. The device is organized as 256K x 18 bits and operates within a supply voltage range of 3.135V to 3.465V. It is housed in a 119-pin plastic ball grid array (PBGA) package with dimensions of 14x22 mm. The component supports surface mount installation and functions within an ambient temperature range of 0°C to 70°C.
Feature Summary
- Supports synchronous burst mode operations for high-speed data transfer
- Includes self-timed write cycles with global write control capabilities
- Features power-down functionality controlled by the ZZ input pin
Applications
- High-performance computing systems requiring fast data buffering
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial automation controllers needing reliable volatile memory storage
Procurement Notes
Verify the specific package variant, as the suffix BG denotes a 119-PBGA form factor. Confirm that the 0°C to 70°C commercial temperature rating aligns with your system requirements. Check for RoHS compliance status, as this specific part may not meet current environmental standards. Ensure the 3.3V I/O logic levels are compatible with your host processor or controller interface design.
Selection Notes
Select this component when a 4.5Mb capacity with 18-bit word width is required. The 8.5 ns access speed suits applications demanding moderate-to-high throughput. Consider the 119-ball BGA package for dense board layouts. Verify that the synchronous SDR architecture fits your timing constraints compared to asynchronous alternatives.
Part Context
This part belongs to the IDT 71V3559 family of synchronous SRAMs. It shares core specifications with variants like the 71V3559S85PFI but differs in packaging. The family is designed for systems requiring fast, parallel memory access with burst mode support. Renesas continues to support this lineage through official datasheets and product change notifications.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific component were not identified in the provided documentation.
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