71V3559S85BG8

Memory IC Overview

The 71V3559S85BG8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It offers a storage capacity of 4.5 Mbit organized as 256K x 18. The device features an 8.5 ns access time and operates on a 3.3V power supply ranging from 3.135V to 3.465V. It utilizes a parallel interface and is housed in a 119-PBGA package measuring 14x22 mm. The component supports surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Supports synchronous single data rate operation with zero bus turnaround for high-speed data transfer
• Includes self-timed write cycles controlled by global write control and byte write enable signals
• Features low power consumption with automatic power-down modes managed by the ZZ input

Memory IC Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment such as routers and switches
• Industrial automation controllers needing reliable volatile storage

Memory IC Procurement Notes

Verify current availability status as this part may be subject to end-of-life notices or discontinuation. Confirm RoHS compliance requirements, as specific variants may not meet current environmental standards. Ensure the 119-PBGA footprint matches the target PCB design. Validate that the 3.3V I/O levels are compatible with the system logic voltage. Check for any recent product change notices affecting labeling or substrate materials.

Memory IC Selection Notes

Select this component when a 256K x 18 organization is required with an 8.5 ns access speed. It is suitable for designs utilizing 3.3V core and I/O supplies. Consider the 119-PBGA package constraints for board space and thermal management. Compare against other members of the 71V3559 family if different pin counts or package types are needed. Ensure the synchronous interface aligns with the system clock architecture.

Memory IC Part Context

This device belongs to the 71V3559 series of synchronous SRAMs designed for high-speed applications. It shares architectural similarities with other parts in the IDT/Renesas SRAM portfolio, offering consistent performance characteristics across various package options. The series is engineered to provide efficient data buffering and caching capabilities for complex digital systems.

Memory IC Replacement Considerations

Direct substitutes include other 71V3559 series variants with different packages, such as the 71V3559S85BQ or 71V3559S85PFI8. Verify pin compatibility and electrical specifications before substitution. Alternative packages like TQFP or CABGA may require PCB redesign.