71V35761S166BG

Description：IC SRAM 4.5MBIT PAR 119PBGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray

SKU:baa71243ed69 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 4.5MBIT PAR 119PBGA
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Synchronous, SDR
Memory Size：4.5Mbit
Memory Organization：128K x 36
Memory Interface：Parallel
Clock Frequency：166 MHz
Write Cycle Time - Word, Page：-
Voltage - Supply：3.135V ~ 3.465V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：119-BGA
Supplier Device Package：119-PBGA (14x22)
Access Time：3.5 ns

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71V35761S166BG

Overview

The Renesas Electronics Corporation 71V35761S166BG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It features a parallel interface and a storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports a maximum clock frequency of 166 MHz with an access time of 3.5 nanoseconds. It operates on a supply voltage ranging from 3.135 volts to 3.465 volts and is housed in a 165-pin cavity ball grid array (CABGA) package measuring 13x15 millimeters.

Feature Summary

Supports high-speed parallel data transfer via a synchronous SDR interface architecture.
Provides a wide 36-bit data bus width for efficient system integration.
Utilizes a compact surface-mount BGA package suitable for automated assembly.

Applications

High-performance embedded systems requiring fast memory access
Network infrastructure equipment
Industrial control systems

Procurement Notes

Verify the exact suffix against official documentation, as generic identifiers may obscure specific package or temperature variants. Confirm current availability status, as this component type may be subject to discontinuation notices. Ensure compatibility with existing board layouts regarding the 165-pin CABGA footprint before procurement.

Selection Notes

Select this component when a 36-bit data path is required for synchronous applications. Verify that the operating environment falls within the specified commercial temperature range. Ensure the design accommodates the specific power supply requirements and the physical dimensions of the 165-pin cavity ball grid array package.

Part Context

This part belongs to the 71V35761S family of synchronous SRAMs manufactured by Renesas Electronics. The family includes various speed grades and package options, such as TQFP and PBGA configurations. These devices are designed to provide high-density memory solutions for demanding digital signal processing and communication applications.