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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.5 ns
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Overview
The Renesas Electronics Corporation 71V35761S166PFGI is a synchronous single data rate static random-access memory integrated circuit. It provides a storage capacity of 4.5 Mbit organized as 128K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 166 MHz and an access time of 3.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and functions at temperatures between -40°C and +85°C. The component is housed in a 100-lead TQFP package measuring 14x20 mm.
Feature Summary
- Supports pipelined burst read operations with a dedicated burst counter for sequential data access.
- Features single-cycle deselect capability to terminate active bursts immediately upon command assertion.
- Utilizes 3.3 V I/O logic levels compatible with standard system interfaces while maintaining 3.3 V core operation.
Applications
- High-speed digital signal processing systems requiring low-latency memory access
- Network infrastructure equipment utilizing parallel bus architectures
- Industrial control units operating in extended temperature environments
Procurement Notes
Verify the specific suffix PFGI against official Renesas documentation to confirm the 100-TQFP package and industrial temperature grade. Confirm RoHS compliance status as historical batches may vary. Check current lifecycle status, as this part number has been subject to discontinuance notifications. Ensure design-in compatibility with existing PCB footprints and signal integrity requirements before procurement.
Selection Notes
Select this component when a 36-bit wide data path is required for high-throughput applications. The 166 MHz speed class offers faster performance than lower-frequency variants. Consider the TQFP package constraints for board space compared to BGA options. Verify that the 3.3 V supply rail matches the target system architecture without requiring level shifting.
Part Context
This device belongs to the IDT 71V35761 family of synchronous SRAMs. The family shares common architectural features including pipelined outputs and burst counters. Variants differ primarily in speed grades, package types, and temperature ranges. The 71V35761 series is designed for applications demanding high bandwidth and deterministic latency in parallel memory subsystems.
Replacement Considerations
Official substitutes include the 71V35761S166BQGI for BGA packaging or the 71V35761SA166PFGI for updated RoHS compliance. Verify pinout compatibility and electrical specifications before substitution. Cross-reference datasheets to ensure identical burst behavior and timing parameters.
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