71V35761S166PFGI8

Overview

The 71V35761S166PFGI8 is a synchronous static random-access memory device manufactured by Renesas Electronics. It features a storage organization of 128K x 36 bits, providing a total capacity of 4 Mbit. The component operates with a maximum clock frequency of 166 MHz and achieves an access time of 3.5 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The maximum power consumption current is specified at 330 mA. The device supports single data rate (SDR) operation and is housed in a TQFP-100 package suitable for surface mount technology.

Feature Summary

• Supports pipelined burst operations with a dedicated burst counter for sequential data access.
• Features single-cycle deselect capability to terminate burst sequences immediately.
• Includes self-timed write cycles controlled by global write control and byte write enable signals.

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processing systems
• Data storage in industrial control applications requiring fast access

Procurement Notes

Verify the specific suffix PFGI8 against official Renesas documentation to confirm pinout compatibility and moisture sensitivity level requirements. Confirm RoHS compliance status as indicated in the latest datasheet revision. Ensure handling procedures account for the specified humidity sensitivity classification during storage and assembly processes.

Selection Notes

Select this component when a 36-bit wide synchronous SRAM interface is required for high-throughput data paths. The 166 MHz operating speed suits applications demanding low-latency memory access. Consider the TQFP-100 package constraints for PCB layout and thermal management relative to the 330 mA maximum current draw.

Part Context

This part belongs to the 71V35761S series of synchronous SRAMs from Renesas Electronics. It shares architectural similarities with other devices in the family but differs in packaging and specific electrical characteristics. The series is designed for applications requiring high-speed parallel data transfer with pipelined output structures.

Replacement Considerations

IDT71V35761S166PFGI8 is listed as an alias for this component. Verify functional equivalence through official cross-reference documentation before substitution.

FAQ

What is the burst mode behavior of this SRAM?

The device supports pipelined burst operations with a burst counter that can be terminated via single-cycle deselect.

How is the write cycle managed in this component?

It employs self-timed write cycles controlled by a global write control signal along with byte write enable inputs.