71V35761S183BG

71V35761S183BG

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:19ca51127c80 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:183 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.3 ns

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71V35761S183BG

Overview

The Renesas Electronics Corporation 71V35761S183BG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It features a parallel interface with a storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports a maximum clock frequency of 183 MHz and provides an access time of 3.3 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 millimeters.

Feature Summary

  • Supports high-speed parallel data transfer via a synchronous SDR interface architecture
  • Provides fast data access through pipelined burst mode capabilities
  • Utilizes a compact surface-mount PBGA package for efficient board integration

Applications

  • High-performance networking equipment requiring rapid data buffering
  • Telecommunications systems utilizing pipeline burst SRAM architectures
  • Industrial control systems needing fast volatile memory storage

Procurement Notes

Verify component authenticity due to discontinuation status. Confirm package markings match the 119-PBGA specification. Check for moisture sensitivity level compliance prior to assembly. Ensure voltage levels align with the specified 3.3-volt operating range. Review official end-of-life notifications for availability constraints.

Selection Notes

Select this component for applications demanding low-latency parallel memory access. The 36-bit bus width suits wide-data processing tasks. Verify thermal requirements against the commercial temperature grade. Consider pin compatibility when replacing older IDT variants. Evaluate system clock stability to support the 183 MHz maximum frequency.

Part Context

This part belongs to the 71V35761S family of synchronous SRAM devices manufactured by Renesas Electronics. It represents a continuation of the IDT product line acquired by Renesas. The device is designed for high-throughput data handling in embedded systems. It shares architectural similarities with other members of the 71V35761 series.

Replacement Considerations

Official substitutes include the 71V35761SA183BG8 and IDT71V35761S183BQI8. These alternatives offer identical electrical specifications and functional compatibility. Verify package dimensions and pinout alignment before implementation.

71V35761S183BG71V35761S183BG

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