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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:183 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.3 ns
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Overview
The Renesas Electronics Corporation 71V35761S183BGG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It features a storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device operates with a maximum clock frequency of 183 MHz and provides an access time of 3.3 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. It supports surface mount installation and is rated for an operating temperature range of -40°C to +85°C.
Feature Summary
- Supports synchronous burst mode operations for high-speed data transfer
- Integrates dedicated write, data, address, and control registers
- Utilizes 3.3V CMOS technology for standard logic compatibility
Applications
- High-performance networking equipment requiring fast buffer memory
- Telecommunications infrastructure systems
- Industrial automation controllers
Procurement Notes
Verify the specific suffix BGG against official Renesas documentation to confirm the 119-PBGA package and lead-free status. Confirm that the RoHS compliance status aligns with project requirements, as some variants may not meet current environmental standards. Check for active End-of-Life notifications or Product Change Notices regarding substrate or labeling updates before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide data path is required for system bus alignment. Ensure the design accommodates the 119-ball BGA footprint and thermal dissipation needs. Verify that the 183 MHz clock speed meets the target application's timing constraints. Consider the -40°C to +85°C industrial temperature rating for environmental suitability.
Part Context
This part belongs to the IDT 71V35761 family of synchronous SRAMs manufactured by Renesas Electronics. The family offers various speed grades and package options, including PBGA and TBGA configurations. The 71V35761 series is designed for applications demanding low latency and high bandwidth memory solutions in embedded systems.
Replacement Considerations
Consult official Renesas datasheets for direct pin-compatible substitutes within the 71V35761 series. Verify equivalent speed grades and package dimensions for any cross-references.
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