71V35761S183BGI8

71V35761S183BGI8

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:92cbd8dc5c82 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:183 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.3 ns

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71V35761S183BGI8

Overview

The 71V35761S183BGI8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 183 MHz and features an access time of 3.3 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 millimeters. The component is designed for surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Feature Summary

  • Supports high-speed parallel data transfer via synchronous single data rate architecture
  • Integrates pipelined burst read capabilities for efficient sequential data access
  • Utilizes a compact 119-pin PBGA surface-mount package for board space optimization

Applications

  • High-performance networking equipment requiring fast buffer memory
  • Telecommunications infrastructure systems
  • Industrial automation control units

Procurement Notes

Verify the exact suffix configuration against official Renesas documentation, as variations such as BGGI or BG8 may indicate different packaging or environmental ratings. Confirm current availability status, as this specific part number may be subject to discontinuation notices. Ensure compliance with RoHS directives if required for the target application, noting that older batches may not meet current standards. Cross-reference the datasheet revision date to ensure compatibility with existing design specifications.

Selection Notes

Select this component when a wide data bus width of 36 bits is necessary for system architecture alignment. Consider the 183 MHz operating speed for applications demanding low-latency data buffering. Evaluate the thermal performance within the commercial temperature range to ensure reliable operation under expected load conditions. Verify that the PCB layout supports the specific pinout and footprint dimensions of the 119-PBGA package.

Part Context

This SRAM belongs to the 71V35761S family of synchronous memory devices from Renesas Electronics. The family is characterized by its ability to handle wide data paths at high frequencies, making it suitable for complex digital signal processing tasks. The specific model integrates standard synchronous control signals to synchronize data input and output with the system clock.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

71V35761S183BGI871V35761S183BGI8

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