71V35761S200BG8

Overview

The 71V35761S200BG8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics. It features a storage capacity of 4.5 Megabits organized as 128K words by 36 bits. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates on a parallel interface with a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 119-pin plastic ball grid array package measuring 14x22 mm and is designed for surface mount installation.

Feature Summary

• Supports high-speed synchronous operation at up to 200 MHz
• Provides 36-bit wide data bus for high bandwidth applications
• Utilizes self-timed write cycles for efficient data handling
• Includes byte write enable controls for granular data management

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment demanding low latency
• Industrial automation controllers needing reliable volatile storage
• Telecommunications base stations processing real-time data streams

Procurement Notes

Verify the specific suffix BQGI or BG8 against current manufacturer documentation to confirm pinout compatibility and moisture sensitivity level requirements. Confirm RoHS compliance status as historical records indicate potential non-compliance for certain variants. Ensure proper electrostatic discharge precautions during handling due to the fine-pitch BGA packaging. Validate that the 3.3V I/O levels match the target system logic voltages before integration.

Selection Notes

Select this component when a 36-bit data width is required for system architecture alignment. Choose this part for designs needing sub-4 ns access times within a synchronous framework. Consider the 119-pin BGA form factor for dense board layouts where leaded packages are unsuitable. Evaluate thermal dissipation capabilities as the device draws significant current during active burst operations compared to lower-speed alternatives.

Part Context

This SRAM belongs to the 71V35761SA series, which represents Renesas' high-performance synchronous memory line. The series is engineered for applications requiring deterministic timing and high throughput. The 200 MHz variant offers faster performance than the 166 MHz counterpart while maintaining the same 36-bit organization. It serves as a critical buffer between processors and slower main memory subsystems.

Replacement Considerations

The IDT71V35761S200BG8 is a documented alias for this component. Verify electrical parameters and pin assignments before substituting with other 128K x 36 synchronous SRAMs from different manufacturers.