71V35761S200BGG

Overview

The 71V35761S200BGG is a 4.5 Mbit synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a 128K x 36 memory organization and operates with a parallel interface at a maximum clock frequency of 200 MHz. The device has a typical access time of 3.1 ns and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface mount installation.

Feature Summary

• Supports synchronous single data rate (SDR) operations with pipelined burst architecture
• Integrates dedicated write, data, address, and control registers for efficient management
• Utilizes 3.3V CMOS technology for standard logic compatibility

Applications

• High-speed buffer applications
• Cache memory systems
• Parallel interface data processing

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to discontinuance notifications. Confirm specific lot codes and moisture sensitivity levels prior to assembly. Ensure compliance with RoHS status requirements for the specific manufacturing batch. Review official product change notices for any packaging or labeling updates that may affect integration.

Selection Notes

Select this component when a 36-bit wide data path is required for high-throughput parallel processing. The 200 MHz speed class suits applications needing low latency without complex asynchronous timing constraints. Consider the 119-pin BGA footprint for board space optimization compared to pin-grid arrays.

Part Context

This device belongs to the 71V35761S series of synchronous SRAMs. It shares architectural similarities with variants like the 71V35761SA183BGGI but offers higher clock speeds. The series is characterized by its pipelined burst mode capability and robust 3.3V operation.

Replacement Considerations

Check for direct substitutes such as the IDT71V35761S200BGGI alias. Verify pinout compatibility and electrical specifications against alternative sources before substitution.