71V35761S200BGG8

71V35761S200BGG8

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:c31bf7cba8a1 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.1 ns

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71V35761S200BGG8

Overview

The 71V35761S200BGG8 is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin plastic ball grid array package measuring 14x22 millimeters.

Feature Summary

  • Supports high-speed parallel interface for efficient data transfer
  • Utilizes synchronous single data rate architecture for precise timing control
  • Features pipelined burst mode operation for improved throughput

Applications

  • High-performance computing systems requiring fast memory access
  • Network infrastructure equipment demanding low latency
  • Industrial automation controllers needing reliable volatile storage

Procurement Notes

Verify component authenticity through authorized distributors due to potential counterfeit risks. Confirm RoHS compliance status as the specific variant may not meet current environmental standards. Check for obsolescence notices or production change notifications that could affect long-term availability. Ensure proper handling procedures are followed given moisture sensitivity classification.

Selection Notes

Select this component when system requirements specify 36-bit wide data paths and synchronous operation at 200 MHz. Consider the 119-PBGA package constraints for PCB layout and thermal management. Evaluate power consumption characteristics against system budget limits. Compare alternative packages if space or pin count requirements differ from the standard configuration.

Part Context

This part belongs to the 71V35761S family of synchronous SRAM devices designed for applications requiring high bandwidth and low latency. The series offers various speed grades and package options to accommodate different design constraints while maintaining consistent electrical performance characteristics across the product line.

Replacement Considerations

Check for direct substitutes within the same family such as 71V35761SA200BG8. Verify pin compatibility and electrical specifications before substitution. Consult manufacturer documentation for any recommended upgrades or cross-reference alternatives.

71V35761S200BGG871V35761S200BGG8

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