71V35761S200BGGI

71V35761S200BGGI

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:9a2650c83a5a Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.1 ns

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71V35761S200BGGI

Overview

The 71V35761S200BGGI is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 200 MHz and features an access time of 3.1 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin plastic ball grid array package measuring 14x22 mm. The component is rated for industrial operating temperatures from -40°C to +85°C.

Feature Summary

  • Supports high-speed parallel data transfer via synchronous single data rate architecture
  • Integrates pipelined output structures for improved throughput efficiency
  • Includes burst counter functionality for sequential data access optimization
  • Features single cycle deselect capability for flexible bus control

Applications

  • High-performance embedded systems requiring fast memory access
  • Industrial equipment control units
  • Network infrastructure hardware
  • Telecommunications signal processing modules

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity upon receipt, as moisture sensitivity level 3 requires strict handling protocols. Check revision history against current datasheets to ensure compatibility with existing system designs. Validate electrical parameters against application requirements before integration.

Selection Notes

Select this component when specific 36-bit word width and 200 MHz synchronous performance are required. Compare access times and power consumption against alternative SRAM families. Ensure voltage levels match the 3.3V I/O standard. Consider physical footprint constraints of the 119-PBGA package during PCB layout planning.

Part Context

This part belongs to the 71V35761S family of synchronous SRAMs designed for high-bandwidth applications. It shares architectural similarities with other members like the 71V35761SA series but differs in speed grade and packaging options. The device represents a specialized memory solution within Renesas' broader portfolio of high-performance computing components.

Replacement Considerations

Publicly confirmed substitute part numbers include IDT71V35761S200BGGI. Verify pinout compatibility and electrical specifications before substitution. Review manufacturer notices for any design-in changes affecting form, fit, or function.

71V35761S200BGGI71V35761S200BGGI

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