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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.1 ns
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Overview
The 71V35761S200BGI is a Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) manufactured by Renesas Electronics. It features a memory organization of 128K x 36 bits, resulting in a total capacity of 4.5 Mbit. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and has a maximum power consumption of 360 mA. The component utilizes a parallel interface and is housed in a 119-PBGA package measuring 14x22 mm. It is rated for industrial operating temperatures from -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous data transfer at up to 200 MHz
- Provides wide 36-bit data bus width for efficient system integration
- Utilizes pipelined burst architecture for improved throughput
Applications
- High-performance networking equipment
- Telecommunications infrastructure systems
- Industrial control applications requiring fast memory access
Procurement Notes
Verify the exact suffix against official Renesas documentation to confirm pinout compatibility and electrical specifications. Confirm RoHS compliance status as manufacturing processes may vary. Check current product lifecycle status, as this specific part number may be discontinued or subject to change. Ensure proper handling procedures are followed due to moisture sensitivity classification.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for high-bandwidth applications. The 200 MHz speed grade offers low latency suitable for demanding processing tasks. Consider the 119-pin BGA package constraints during PCB layout. Verify that the system power supply can maintain the required 3.3V tolerance under peak load conditions.
Part Context
This device belongs to the 71V35761S family of synchronous SRAMs designed for high-speed data processing. It shares architectural similarities with other members like the 71V35761SA200BGI but differs in specific packaging and commercial/industrial temperature ratings. The family targets applications needing reliable, fast random access memory without the complexity of dynamic refresh cycles.
Replacement Considerations
The 71V3577S80BGI is listed as a similar alternative by distributors, though it operates at a lower 80 MHz speed. Verify functional equivalence carefully as speed grades differ significantly. No direct pin-for-pin replacement with identical performance metrics is explicitly confirmed in public sources.
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