Memory IC 71V35761S200PF product image

71V35761S200PF

$1.84
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:4dbe36388f97 Category: Brand:

  
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71V35761S200PF is listed in the Memory IC range at ChipApex. The manufacturer field lists IDT, Integrated Device Technology Inc. Its product description is IC SRAM 4.5MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 71V35761S200PF

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:3.1 ns

Memory IC datasheet and documents for 71V35761S200PF

71V35761S200PF

Memory IC Overview

The IDT71V35761S200PF is a high-speed synchronous static random access memory (SRAM) device manufactured by Integrated Device Technology. It features a 4.5Mbit capacity organized as 128K words by 36 bits, utilizing a parallel interface. The component operates at a maximum clock frequency of 200 MHz with a cycle time of 3.1 ns. It supports 3.3V I/O levels and includes pipelined outputs, a burst counter, and single-cycle deselect functionality for efficient data handling in high-performance systems.

Memory IC Feature Summary

  • Supports high-speed data processing through synchronous SRAM technology operating up to 200 MHz
  • Features pipelined outputs and a burst counter for optimized sequential data access
  • Enables flexible system integration via single-cycle deselect capability

Memory IC Applications

  • High-performance computing systems requiring fast memory access
  • Network infrastructure equipment demanding low-latency data buffering
  • Industrial automation controllers needing reliable synchronous storage

Memory IC Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct speed grade and package configuration. Confirm that the 3.3V I/O voltage requirements align with your system design specifications before procurement. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required for parallel data paths. Ensure the design accommodates the 3.3V logic levels and 200 MHz clock speeds. Consider the 100-pin TQFP package constraints for PCB layout. Verify power supply stability to support the synchronous operation characteristics defined in the electrical specifications.

Memory IC Part Context

This device belongs to the IDT 71V3576/78 family of high-speed synchronous SRAMs. The family offers various density and speed options, with this specific model providing a balance of high bandwidth and moderate density. It is designed for applications where deterministic latency and high throughput are critical performance metrics.

Memory IC Replacement Considerations

Check for direct pin-compatible substitutes within the same IDT family or equivalent offerings from other manufacturers. Ensure any replacement maintains the 128K x 36 organization and 3.3V I/O compatibility. Verify that the new component supports the required 200 MHz clock frequency and similar pipeline architecture.

71V35761S200PF71V35761S200PF
$1.84
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