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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.1 ns
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Overview
The IDT71V35761S200PF is a high-speed synchronous static random access memory (SRAM) device manufactured by Integrated Device Technology. It features a 4.5Mbit capacity organized as 128K words by 36 bits, utilizing a parallel interface. The component operates at a maximum clock frequency of 200 MHz with a cycle time of 3.1 ns. It supports 3.3V I/O levels and includes pipelined outputs, a burst counter, and single-cycle deselect functionality for efficient data handling in high-performance systems.
Feature Summary
- Supports high-speed data processing through synchronous SRAM technology operating up to 200 MHz
- Features pipelined outputs and a burst counter for optimized sequential data access
- Enables flexible system integration via single-cycle deselect capability
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment demanding low-latency data buffering
- Industrial automation controllers needing reliable synchronous storage
Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct speed grade and package configuration. Confirm that the 3.3V I/O voltage requirements align with your system design specifications before procurement. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards.
Selection Notes
Select this component when a 128K x 36 organization is required for parallel data paths. Ensure the design accommodates the 3.3V logic levels and 200 MHz clock speeds. Consider the 100-pin TQFP package constraints for PCB layout. Verify power supply stability to support the synchronous operation characteristics defined in the electrical specifications.
Part Context
This device belongs to the IDT 71V3576/78 family of high-speed synchronous SRAMs. The family offers various density and speed options, with this specific model providing a balance of high bandwidth and moderate density. It is designed for applications where deterministic latency and high throughput are critical performance metrics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same IDT family or equivalent offerings from other manufacturers. Ensure any replacement maintains the 128K x 36 organization and 3.3V I/O compatibility. Verify that the new component supports the required 200 MHz clock frequency and similar pipeline architecture.
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