71V35761S200PFG8

71V35761S200PFG8

$6.02
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:62e16fba0e28 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:3.1 ns

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71V35761S200PFG8

Overview

The Renesas Electronics Corporation 71V35761S200PFG8 is a 4.5 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) integrated circuit. It features a parallel interface and operates at a maximum clock frequency of 200 MHz with a typical access time of 3.1 ns. The device utilizes a 100-TQFP package measuring 14x14 mm. It requires a supply voltage range of 3.135 V to 3.465 V and supports an operating temperature range of -40°C to +85°C.

Feature Summary

  • Supports high-speed synchronous data transfer via a parallel interface for efficient system integration.
  • Provides low-latency memory access through pipelined burst architecture capabilities.
  • Operates within standard industrial temperature ranges for reliable performance in varied environments.

Applications

  • High-performance computing systems requiring fast buffer memory
  • Network infrastructure equipment needing rapid data caching
  • Industrial control systems demanding reliable synchronous storage

Procurement Notes

Verify component authenticity due to obsolete status. Confirm package integrity as the device is no longer manufactured. Check datasheet revisions for any pinout or electrical specification updates before finalizing design implementations.

Selection Notes

Select this component when a 4.5 Mbit capacity with 200 MHz synchronous operation is required. Ensure the design accommodates the 100-TQFP footprint and 3.3V logic levels. Consider availability constraints given the discontinuation notice from the manufacturer.

Part Context

This part belongs to the 71V35761S family of synchronous SRAMs. It shares architectural similarities with other variants like the 71V35761S200BG8 but differs in packaging, utilizing a TQFP form factor instead of a BGA. The series is designed for applications prioritizing speed and parallel data throughput.

Replacement Considerations

Public confirmed substitute: IS61LF12836A-6.5TQLI-TR by Integrated Silicon Solution Inc. Verify compatibility regarding pinout, voltage, and timing specifications before substitution.

71V35761S200PFG871V35761S200PFG8
$6.02
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