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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.5 ns
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Overview
The 71V35761SA166BGG8 is a high-performance synchronous single data rate static random access memory manufactured by Renesas Electronics Corporation. It features a total storage capacity of 4.5 Mbit organized as 128K words by 36 bits. The device supports a maximum clock frequency of 166 MHz with a typical access time of 3.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin plastic ball grid array package measuring 14x22 mm.
Feature Summary
- Supports pipelined burst read operations for high-speed data throughput
- Features parallel interface architecture for direct system connectivity
- Includes on-chip write buffers to optimize bus utilization
Applications
- High-performance networking equipment
- Industrial control systems
- Telecommunications infrastructure
Procurement Notes
This component has reached end-of-life status and is no longer in active manufacturing. Verification of availability requires checking authorized distributors for remaining stock or approved replacement parts. Confirm RoHS compliance status, as the original specification indicates non-compliance. Validate that any substitute part matches the required pinout and electrical characteristics before integration.
Selection Notes
Select this component for applications requiring fast synchronous SRAM with wide data buses. Ensure the design accommodates the specific 3.3 V I/O voltage requirements and the 119-PBGA footprint. Consider thermal management due to power consumption levels associated with 166 MHz operation. Verify that the system timing constraints align with the 3.5 ns access time specifications.
Part Context
This part belongs to the 71V35761S family of synchronous SRAMs from Renesas. It is designed for demanding digital signal processing and memory-intensive tasks. The device utilizes advanced CMOS technology to deliver low power consumption relative to its performance class. It is commonly used in embedded systems where deterministic latency is critical.
Replacement Considerations
The 71V3577S80BGI is listed as an available alternative. Verify compatibility regarding speed grade differences and ensure the substitution meets all functional requirements for the target application.
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