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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.5 ns
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Overview
The 71V35761SA166BGGI8 is a synchronous single data rate static random-access memory manufactured by Renesas Electronics. It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device supports a maximum clock frequency of 166 MHz with an access time of 3.5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and has a maximum power consumption of 360 mA. The component utilizes a parallel interface and is housed in a 119-pin PBGA package measuring 14x22 mm. It functions reliably across an industrial temperature range from -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous operation with a maximum clock frequency of 166 MHz for efficient data throughput.
- Features a 36-bit bus width organization suitable for wide data path applications requiring high bandwidth.
- Includes pipelined architecture to eliminate dead bus cycles during read-to-write or write-to-read transitions.
Applications
- High-performance networking equipment requiring fast memory access
- Telecommunications infrastructure systems
- Industrial control systems with strict timing requirements
Procurement Notes
Verify the specific suffix BGGI8 to ensure compatibility with the 119-pin PBGA package and industrial temperature grade. Confirm that the 3.3V I/O voltage level matches the system design, as other variants may utilize different logic levels. Check current availability status as this component may be subject to discontinuation notices. Ensure proper handling procedures are followed due to moisture sensitivity classification.
Selection Notes
Select this component when a 36-bit data width is required for synchronous memory applications. It is appropriate for designs needing 166 MHz performance with low latency. Consider the 119-pin PBGA footprint for board layout constraints. Verify that the 3.3V core and I/O specifications align with the target platform's power delivery network.
Part Context
This part belongs to the 71V35761S series of synchronous SRAMs from Renesas. It shares architectural similarities with other devices in the family but differs in speed grade and packaging. The 166 MHz variant represents a high-performance option within the series, designed to meet demanding system clock requirements while maintaining low power consumption characteristics typical of modern CMOS SRAM technologies.
Replacement Considerations
Direct substitutes include the 71V35761SA166BGGI9 which offers identical electrical specifications but utilizes a lead-free Pb-free compliant package. Other compatible options within the same speed grade and organization should be verified against pinout and thermal requirements before integration into existing designs.
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