— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:183 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.3 ns
Download product information
Overview
The Renesas Electronics Corporation 71V35761SA183BG8 is a synchronous single-data-rate (SDR) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 4.5 megabits, organized as 128 kilowords by 36 bits. The device supports a maximum clock frequency of 183 MHz with an access time of 3.3 ns. It operates on a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It is rated for commercial operating temperatures ranging from 0°C to 70°C.
Feature Summary
- Synchronous SDR architecture supporting high-speed data transfer via pipelined burst mode
- Parallel interface configuration for direct system bus connectivity
- Wide 36-bit word width suitable for high-bandwidth applications
Applications
- High-performance networking equipment requiring fast buffer memory
- Telecommunications infrastructure systems
- Industrial control systems with high-speed data processing needs
Procurement Notes
This component has been officially discontinued by the manufacturer. Product discontinuance notifications confirm that production has ceased and the part is no longer available for new orders. Engineers must verify current availability through authorized distributors, though stock is likely limited. Design-in activities should prioritize replacement strategies immediately to avoid supply chain interruptions for existing products.
Selection Notes
Select this part only if the specific 128K x 36 organization and 183 MHz synchronous performance are required. Verify that the 119-PBGA footprint matches the PCB layout constraints. Ensure the design accommodates the 3.3 V nominal supply voltage range. Consider the commercial temperature grade limits when defining the environmental operating envelope for the final assembly.
Part Context
The 71V35761SA183BG8 belongs to the IDT 71V35761S family of synchronous SRAMs. This series is designed for applications demanding high throughput and low latency. The 'SA' suffix typically denotes specific speed grades or pin configurations within the broader product line. The device represents a transition point in Renesas's memory portfolio following the acquisition of Integrated Device Technology.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, engineers should consult official Renesas replacement guides or contact technical support for qualified alternatives.
ChipApex | Global Electronic Components Supplier








