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71V35761SA183BGG
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Product Detailed Parameters
- Description：IC SRAM 4.5MBIT PAR 119PBGA
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Synchronous, SDR
- Memory Size：4.5Mbit
- Memory Organization：128K x 36
- Memory Interface：Parallel
- Clock Frequency：183 MHz
- Write Cycle Time - Word, Page：-
- Voltage - Supply：3.135V ~ 3.465V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：119-BGA
- Supplier Device Package：119-PBGA (14x22)
- Access Time：3.3 ns
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Overview
The Renesas Electronics 71V35761SA183BGG is a 4.5 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) IC. It features a parallel interface with a memory organization of 128K x 36 bits. The device supports a maximum clock frequency of 183 MHz and offers an access time of 3.3 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin PBGA package measuring 14x22 mm. The component is designed for surface mount installation.
Feature Summary
- Supports synchronous single data rate operation with pipelined burst architecture for high-speed data transfer
- Integrates dedicated write, data, address, and control registers for efficient management
- Utilizes a parallel interface to facilitate direct connectivity with host processors
Applications
- High-speed buffer memory in telecommunications equipment
- Cache memory solutions for network processing units
- Data storage in industrial automation control systems
Procurement Notes
Verify the specific suffix BGG against the official datasheet to confirm the 119-PBGA package and commercial temperature range. Confirm RoHS compliance status as historical records indicate non-compliance for this series. Check for End-of-Life notifications or Product Change Notices regarding substrate or labeling updates before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide parallel interface is required for synchronous memory applications. Ensure the design accommodates the 3.3 V power supply requirements and the physical dimensions of the 119-pin PBGA package. Verify that the system timing constraints align with the 3.3 ns access time specification.
Part Context
This part belongs to the 71V35761S family of CMOS SRAMs manufactured by Renesas Electronics. The family is characterized by its synchronous burst architecture and 3.3 V operation. The 71V35761SA183BGG specifically denotes the variant with the 183 MHz speed grade and the BGG packaging configuration.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult the manufacturer's discontinuance notices for potential obsolescence management strategies.
