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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:183 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.3 ns
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Overview
The 71V35761SA183BGG8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits per word. The device supports a maximum clock frequency of 183 MHz with an access time of 3.3 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin plastic ball grid array package measuring 14x22 mm.
Feature Summary
- Supports high-speed parallel interface for synchronous data transfer
- Features pipelined burst architecture for efficient memory operations
- Includes built-in self-test capabilities for reliability verification
Applications
- High-performance networking equipment
- Industrial control systems
- Telecommunications infrastructure
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Check for moisture sensitivity handling procedures during storage and assembly. Validate pin compatibility with existing PCB layouts before procurement.
Selection Notes
Select this component when high-speed synchronous memory with wide data bus width is required. Consider the 36-bit organization for applications needing error correction or extended data paths. Evaluate thermal performance within the specified operating temperature range. Ensure power supply stability matches the 3.3 V I/O requirements.
Part Context
This SRAM belongs to the 71V35761S family of synchronous memories designed for demanding digital signal processing tasks. The device utilizes advanced semiconductor technology to achieve low latency and high throughput. It is part of Renesas' portfolio targeting industrial and communication markets requiring reliable data buffering.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-references with manufacturer obsolescence notices.
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