71V35761SA183BQG

Overview

The IDT71V35761SA183BQG is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits per word. The device supports a maximum clock frequency of 183 MHz with an access time of 3.3 ns. It operates on a 3.3 V power supply within a range of 3.135 V to 3.465 V and utilizes a parallel interface. The component is housed in a 165-pin CABGA package measuring 13x15 mm.

Feature Summary

• Synchronous SDR architecture supporting pipelined burst operations for high-speed data transfer
• Parallel interface configuration enabling direct connection to system buses
• Surface-mount installation suitable for automated assembly processes

Applications

• High-performance computing systems requiring fast temporary data storage
• Network infrastructure equipment utilizing parallel memory interfaces
• Industrial control systems needing reliable volatile memory solutions

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Check for moisture sensitivity handling procedures during storage and shipping. Validate package integrity upon receipt to ensure pin alignment matches the 165-CABGA specification.

Selection Notes

Select this component when a 36-bit wide parallel interface is required for synchronous memory applications. Ensure the design supports the specific 3.3 V I/O voltage levels and timing constraints. Consider the physical dimensions of the 165-pin CABGA package for PCB layout compatibility. Evaluate thermal management needs based on the specified operating temperature range.

Part Context

This SRAM belongs to the IDT 71V35761 series, designed for high-throughput data processing tasks. The manufacturer has designated this specific speed grade variant for performance-critical environments. The product line emphasizes low latency and high bandwidth capabilities for embedded memory subsystems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other 128K x 36 synchronous SRAM devices if sourcing new inventory.