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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:183 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:3.3 ns
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Overview
The IDT71V35761SA183BQG8 is a 4.5 Mbit synchronous single data rate (SDR) static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a storage organization of 128K x 36 bits. The device supports a maximum clock frequency of 183 MHz and offers an access time of 3.3 ns. It operates on a 3.3 V power supply within the range of 3.135 V to 3.465 V. The component is housed in a 165-CABGA package measuring 13x15 mm, suitable for surface mount installation.
Feature Summary
- Supports high-speed parallel data transfer via a synchronous SDR interface architecture
- Provides pipelined burst mode operation for efficient sequential data access
- Includes dedicated control registers for write management and byte-level enable functions
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment with real-time processing demands
- Network infrastructure components utilizing wide data buses
Procurement Notes
Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm specific suffix requirements against current datasheets to ensure compatibility with existing designs. Check for RoHS compliance status updates prior to procurement. Validate package dimensions and pinout configurations against mechanical constraints. Ensure supply chain stability due to potential discontinuation risks associated with legacy memory technologies.
Selection Notes
Select this component when system requirements demand high-frequency synchronous memory with a 36-bit data width. Consider the 183 MHz clock capability for applications needing low-latency data retrieval. Evaluate the 165-CABGA package size for PCB layout constraints. Compare power consumption specifications against thermal management capabilities. Verify that the 3.3 V I/O levels match the host processor voltage domains.
Part Context
This SRAM belongs to the 71V35761 family of synchronous memories designed for high-throughput applications. The series typically includes variants with different access speeds and packaging options. These devices are engineered to support complex digital signal processing and high-bandwidth data handling tasks in industrial and communication sectors.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Cross-reference electrical parameters such as clock speed and access time before substitution. Verify package compatibility and pin assignments to ensure mechanical fit.
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