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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.1 ns
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Overview
The 71V35761SA200BG8 is a synchronous single data rate static random access memory manufactured by Renesas Electronics. It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates on a parallel interface with a supply voltage range of 3.135 V to 3.465 V and a maximum power current of 360 mA. The component is housed in a 119-PBGA package measuring 14x22 mm, suitable for surface mount installation. It functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Synchronous SDR architecture supporting high-speed burst data transfers
- Integrated control registers for write operations and address management
- Standard parallel interface compatible with system bus architectures
Applications
- High-performance embedded systems requiring fast data buffering
- Industrial equipment control units
- Network infrastructure hardware components
Procurement Notes
Verify the specific suffix BG8 against official datasheets to confirm the 119-pin PBGA package configuration. Confirm RoHS compliance status as documentation indicates non-compliance. Check moisture sensitivity level requirements before handling. Ensure the supplier provides valid traceability documents. Validate that the component meets the required operating temperature range for the intended application environment.
Selection Notes
Select this component when a 36-bit wide data path is required for synchronous memory applications. Compare access times and clock frequencies against alternative SRAM devices to ensure timing compatibility. Verify package dimensions fit the PCB layout constraints. Consider the power consumption characteristics relative to the system thermal design. Evaluate the availability of development tools and reference designs for integration.
Part Context
This part belongs to the 71V35761S family of synchronous SRAMs from Renesas. The family offers various speed grades and packaging options to suit different performance needs. These devices are designed for applications demanding reliable high-speed data storage. The series maintains architectural consistency across different variants for easier migration.
Replacement Considerations
IDT71V35761SA200BG8 is listed as an alias for this component.
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