71V35761SA200BGG

Overview

The 71V35761SA200BGG is a synchronous single data rate static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface and a storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is available in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component is designed for surface mount installation.

Feature Summary

• Supports pipelined burst operations with a dedicated burst counter for sequential data access efficiency.
• Features single-cycle deselect capability to allow immediate termination of current transfer cycles.
• Utilizes 3.3 V I/O levels compatible with standard logic families while maintaining internal core voltage requirements.

Applications

• High-speed data buffering in telecommunications infrastructure equipment
• Cache memory implementation in network processing systems
• Frame buffer storage in video signal processing applications

Procurement Notes

Verify the exact suffix designation against official Renesas documentation, as variations such as BGGI or BG8 indicate specific packaging or environmental compliance differences. Confirm availability status, as this series has been subject to discontinuance notices. Ensure that the selected variant matches the required operating temperature range and moisture sensitivity level for the intended assembly process.

Selection Notes

Select this component when a wide 36-bit data path is required for high-throughput parallel interfaces. The 200 MHz speed grade provides low latency suitable for demanding real-time processing tasks. Consider the physical dimensions of the 119-PBGA package during PCB layout planning to ensure adequate thermal dissipation and mechanical stability for the target application environment.

Part Context

This part belongs to the 71V35761S/SA family of synchronous SRAMs, which are engineered for high-performance computing and networking applications. The family offers scalability across different speed grades and package options while maintaining pin compatibility within specific subsets. These devices are widely utilized in systems requiring fast, reliable volatile memory storage with minimal cycle overhead.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific configuration are not available in the provided reference material. Users should consult official Renesas obsolescence notifications for recommended transition paths or equivalent products within the current portfolio.