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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.1 ns
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Overview
The 71V35761SA200BGGI is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports parallel interface operations with a maximum clock frequency of 200 MHz and features an access time of 3.1 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin plastic ball grid array package measuring 14x22 millimeters. The component is designed for industrial temperature ranges spanning from -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous parallel data transfer at up to 200 MHz
- Provides 36-bit wide data organization for efficient bus interfacing
- Utilizes a compact 119-pin PBGA surface-mount package
Applications
- High-performance embedded systems requiring fast data buffering
- Industrial control equipment with strict timing requirements
- Network infrastructure hardware utilizing parallel memory interfaces
Procurement Notes
Verify the specific suffix designation carefully, as availability may vary between tape-and-reel and tray packaging options. Confirm current production status, as this series has faced discontinuation notices. Ensure compatibility with existing PCB footprints and thermal management solutions before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit data width is required for system architecture compatibility. Consider the 200 MHz speed grade if higher throughput is necessary compared to slower variants. Evaluate the 119-pin BGA footprint constraints against available board space and assembly capabilities.
Part Context
This part belongs to the 71V35761S family of synchronous SRAM devices. It shares architectural similarities with other members like the 71V35761S200BGGI but differs in packaging or suffix specifications. The family is designed for applications demanding reliable, high-speed volatile memory storage in industrial and commercial environments.
Replacement Considerations
Direct substitutes include the IDT71V35761S200BGGI. Verify pinout and electrical characteristics match exactly before replacement.
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