71V35761SA200BGGI8

Overview

The 71V35761SA200BGGI8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 4.5 megabits organized as 128 kilowords by 36 bits. The device operates with a maximum clock frequency of 200 MHz and features an access time of 3.1 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface architecture.

Applications

• High-performance embedded systems requiring fast memory access.

Procurement Notes

Verify the specific suffix BGGI8 against official Renesas documentation to confirm pinout, substrate material, and moisture sensitivity level requirements. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for end-of-life notices or product change notifications that may affect long-term availability and manufacturing continuity.

Selection Notes

Select this component when a 128K x 36 organization is required for wide data bus applications. Ensure the design supports the 3.3-volt I/O logic levels and the specified operating temperature range. Verify that the PCB layout accommodates the 119-PBGA footprint dimensions and thermal dissipation needs for synchronous SRAM operation at 200 MHz.

Part Context

This part belongs to the 71V35761S family of synchronous SRAM devices. These components are designed for applications demanding rapid data retrieval and processing speeds. The family typically offers various speed grades and packaging options to suit different system constraints and performance requirements within industrial and communication equipment sectors.

Replacement Considerations

IDT71V35761SA200BGGI8