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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:3.1 ns
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Overview
The Renesas Electronics Corporation 71V35761SA200BQG is a synchronous single data rate static random-access memory (SRAM) device. It features a storage capacity of 4 Mbit organized as 128K x 36 bits. The component supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates on a 3.3V I/O supply voltage ranging from 3.135 V to 3.465 V, with a maximum power current of 360 mA. The device utilizes a parallel interface and is housed in a CABGA-165 package suitable for surface mount installation. It functions within an industrial temperature range of -40°C to +85°C.
Feature Summary
- Supports high-speed synchronous operation with pipelined burst architecture for efficient data throughput.
- Provides wide 36-bit data word width suitable for complex processing applications.
- Operates at standard 3.3V logic levels for compatibility with common system interfaces.
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial control systems needing reliable synchronous data storage
- Telecommunications infrastructure utilizing wide data buses
Procurement Notes
Verify the specific suffix BQG against official Renesas documentation to confirm the exact package type and temperature grade. Ensure that the CABGA-165 footprint matches the target PCB design. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notification, as legacy variants may differ. Cross-reference the part number alias IDT71V35761SA200BQG if sourcing from previous inventory channels.
Selection Notes
Select this component when a 36-bit data width is required alongside high-frequency synchronous performance. Compare the 200 MHz speed grade against other variants in the 71V35761SA series based on system timing constraints. Consider the CABGA-165 package dimensions for board space limitations. Evaluate the 360 mA current consumption against available power delivery capabilities in the target application environment.
Part Context
This SRAM belongs to the Renesas 71V35761SA family of synchronous memories. The family offers various speed grades and packaging options to suit different performance requirements. The 71V35761SA200BQG represents a high-speed variant designed for demanding digital signal processing and communication tasks. It shares architectural similarities with other members of the series but differs in clock frequency and thermal specifications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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