71V35761YSA200BG

71V35761YSA200BG

$3.07
  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Tray

SKU:7bc741c74e19 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.1 ns

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71V35761YSA200BG

Overview

The IDT71V35761YSA200BG is a high-speed Synchronous SRAM organized as 4.5Mb (128K x 36). It supports clock frequencies up to 200 MHz with a 3.1 ns access time. The device operates on a 3.3V power supply within a range of 3.135V to 3.465V. It utilizes a parallel interface and is housed in a 119-PBGA package measuring 14x22 mm. The component is designed for surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Feature Summary

  • Supports high-performance system speeds through pipelined architecture
  • Features self-timed write cycles controlled by global write signals
  • Includes an internal burst address counter for sequential data access

Applications

  • High-speed cache memory systems
  • Network infrastructure equipment
  • Telecommunications hardware

Procurement Notes

Verify the exact suffix against official Renesas or IDT documentation, as variations like 'BG' versus 'BQG' may indicate different substrate materials or RoHS compliance statuses. Confirm current availability status, as specific variants in this family have been subject to production changes or end-of-life notifications. Ensure the selected package matches the PCB footprint requirements precisely.

Selection Notes

Select this component when a 36-bit wide synchronous memory interface is required for high-throughput applications. Compare access times and package dimensions against alternative models in the 71V3576 series. Verify that the 3.3V I/O levels are compatible with the host processor's voltage specifications. Check for boundary scan options if testability requirements mandate JTAG support.

Part Context

This part belongs to the IDT/Renesas 71V3576/78 family of 3.3V Synchronous SRAMs. These devices are engineered for demanding digital signal processing and networking tasks. The family offers various speed grades and packaging options, including TQFP and PBGA configurations, to accommodate different board space and performance constraints.

Replacement Considerations

Check for direct substitutes such as the IDT71V35761S166PFGI8 or IDT71V3576YS133PFG8. Verify pin compatibility and electrical characteristics before substitution.

71V35761YSA200BG71V35761YSA200BG
$3.07
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