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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The 71V3576S133PFGI8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-TQFP (14x14) surface-mount package.
Feature Summary
- Supports high-speed parallel data transfer via synchronous single data rate interface
- Provides fast 4.2 ns access time for efficient data retrieval
- Operates on standard 3.3 V logic levels
Applications
- High-performance computing systems requiring fast buffer memory
- Network infrastructure equipment utilizing parallel bus architectures
- Industrial control systems needing reliable volatile storage
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific suffix PFGI8 matches the required 100-TQFP package and lead-free specifications. Check current lifecycle status as this part may be discontinued or subject to last-time buy restrictions. Ensure environmental compliance documentation aligns with project requirements before finalizing procurement orders.
Selection Notes
Select this component when a 128K x 36 bit organization is required for wide-data parallel interfaces. The 133 MHz speed class suits applications demanding low latency without pipelined overhead. Compare against asynchronous alternatives if power consumption during idle states is critical, as synchronous SRAMs typically draw higher dynamic current during active clock cycles.
Part Context
This device belongs to the Renesas 71V3576 family of synchronous SRAMs. It shares architectural similarities with other members like the IDT71V3576 series but differs in specific timing parameters and packaging options. The 71V3576S133 variant represents a specific speed bin optimized for 133 MHz operation within the broader product line.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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